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SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P DM
0.05
t 1
t 1
t 2
0.02
Single Pulse
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - T A = P DM Z thJA (t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65738 .
www.vishay.com
6
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
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